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What is the probability of an electron being thermally excited to conduction band in silicon at 200C. The band gap energy is 1.12eV. Boltzmann constant is 1.38 x 10^-23 J/K.

Mumbai university > FE > SEM 1 > Applied Physics 1

Marks: 3M

Year: Dec 2012

1 Answer
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Given:-

TemperatureT=20oC=293K

Boltzmann Constant, k=1.38×1023

Band Gap Energy, (Eg) =1.12eV

To Find:

Probability of an electron being excited i.e. F(EC)

Solution:

For an intrinsic semiconductor,

ECEV=EQ2=1.122

ECEV=0.56eV

Now,

$k = 1.38 × …

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