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What is the probability of an electron being thermally excited to conduction band in silicon at 200C. The band gap energy is 1.12eV. Boltzmann constant is 1.38 x 10^-23 J/K.
written 8.4 years ago by | • modified 8.4 years ago |
Mumbai university > FE > SEM 1 > Applied Physics 1
Marks: 3M
Year: Dec 2012
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