Solution:

In order to have better isolation to avoid cos \&lateh up and leakage currents, Sol i.e. Silicon on Insulator technology, in Which insertion of the insulation layer beneath the devices, is popularly used.

To seek full advantage of Sol technology, small changes in the process are required.

The insulating layer is typical $\mathrm{SiO}_2$ and is formed by three techniques: namely sim ox, bonded sUI, or smart.

The insulating region is called buried oxide or Box.

SIMOX:

Separation by the IMplantation of oxygen In this technique, an oxygen implant is performed on an epitaxial wafer before it has started any other cos processing.

The high-energy implant forces a large lase of oxygen deep beneath the surface. Once the implant is complete, a high-temperature anneal is dived to form the $\mathrm{SiO}_2$ insulating region. The annual must also help to recrystallize the silicon in the epitaxial layer, which is at the surface of the water.

Due to the high energy and high dosage of the implant, the surface of the water has been heavily damaged and the silicon wafer causes a surplus of si atoms beneath the surface.

The post-implant anneal must recrystallize the surface to produce high-quality silicon for subsequent Silicon processing.

Oxygen dose two large will lead to slaw k expensive prover ave will cause more defects in the top layer of Silicon.

A too-small dose will receive the junction capacitance enough and will not electrically remove the silicon beneath the buried oxide from the active device