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Compare direct band gap and indirect band gap semiconductors.

written 8.5 years ago by teamques10 ★ 68k

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optical fiber communication

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written 8.5 years ago by teamques10 ★ 68k

Sr. No	Direct Band gap semiconductor	Indirect band gap semiconductor
1.	A direct band-gap (DBG) semiconductor is one in which the maximum energy level of the valence band aligns with the minimum energy level of the conduction band with respect to momentum.	A indirect band-gap (DBG) semiconductor is one in which the maximum energy level of the valence band are misaligned with the minimum energy level of the conduction band with respect to momentum.
2.	In a DBG semiconductor, a direct recombination takes place with the release of the energy equal to the energy difference between the recombining particles.	Due to a relative difference in the momentum, first, the momentum is conserved by release of energy and only after both the momenta align themselves, a recombination occurs accompanied with the release of energy.
3.	The efficiency factor of a DBG semiconductor is much more than that of an IBG semiconductor.	The probability of a radiative recombination, is much less in comparison to that in case of DBG semiconductors
4.	The most thoroughly investigated and studied DBG semiconductor material is Gallium Arsenide (GaAs).	The two well-known intrinsic semiconductors, Silicon and Germanium are both IBG semiconductors.
5.	DBG semiconductors are always preferred over IBG for making optical sources.	The IBG semiconductors cannot be used to manufacture optical sources.

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