The Schottky diode is formed when a metal,such as Aluminum, is brought into contact with a moderately doped N-type semiconductor.
It is a unipolar device because it has electrons as majority carriers on both sides of the junction.
There is no significant current from the metal to semiconductor with reverse bias,thus the delay present in the junction diodes due to hole-electron recombination time is absent here.
The diode is also referred to as hot carrier diode because when it is forward biased, conduction of electrons on the N side gains sufficient energy to cross the junction and enter the metal with large energy,thus they are commonly called hot carrier diodes.