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Compare Depletion and Enhancement type MOSFET.
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Depletion MOSFET Enhancement MOSFET
1. An insulating oxide layer of SiO2 is present between gate and channel 1. There is no oxide layer present
2. n or p type channel is present 2. Channel is not present. At the time of operation, an induced channel gets created
3. For a n-channel D-MOSFET,the VGS can be negative for depletion mode and positive for enhancement mode 3. For a n-channel E-MOSFET, VGS will be only positive
4. For a n-channel D-MOSFET, ID decreases as VGS becomes more and more negative 4. For an n-channel E-MOSFET, ID increases as VGS becomes more and more positive
5. For an n-channel D-MOSFET, ID=0 for VGS >=VP 5. For an n-channel E-MOSFET, ID=0 for VGS <= VT
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