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Compare Depletion and Enhancement type MOSFET.
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written 3.5 years ago by
teamques10
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| Depletion MOSFET | Enhancement MOSFET | ||
|---|---|---|---|
| 1. An insulating oxide layer of SiO2 is present between gate and channel | 1. There is no oxide layer present | ||
| 2. n or p type channel is present | 2. Channel is not present. At the time of operation, an induced channel gets created | ||
| 3. For a n-channel D-MOSFET,the VGS can be negative for depletion mode and positive for enhancement mode | 3. For a n-channel E-MOSFET, VGS will be only positive | ||
| 4. For a n-channel D-MOSFET, ID decreases as VGS becomes more and more negative | 4. For an n-channel E-MOSFET, ID increases as VGS becomes more and more positive | ||
| 5. For an n-channel D-MOSFET, ID=0 for | VGS | >=VP | 5. For an n-channel E-MOSFET, ID=0 for VGS <= VT |
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