• Although the E-MOSFET is useful in special applications, it does not enjoy widespread use.
• However, it played an important role in history because it was part of the evolution towards the E-mode MOSFET, a device that has revolutionized the electronic industry. E-MOSFET has become enormously important, in digital electronics and.
• In the absence of E-MOSFET’s the personal computers (PCs) that are now so widespread would not exist.
• The main difference between the construction of DE-MOSFET and that of E-MOSFET, the E-MOSFET substrate extends all the way to the silicon dioxide (SiO2) and no channels are doped between the source and the drain.
• Channels are electrically induced in these MOSFETs, when a positive gate-source voltage VGS is applied to it.
• As its name indicates, this MOSFET operates only in the enhancement mode and has no depletion mode. It operates with large positive gate voltage only.
• It does not conduct when the gate-source voltage VGS = 0. This is the reason that it is called normally-off MOSFET. In these MOSFET’s drain current ID flows only when VGS exceeds VGST [gate-to-source threshold voltage].
• When drain is applied with positive voltage with respect to source and no potential is applied to the gate two N-regions and one P-substrate from two P-N junctions connected back to back with a resistance of the P-substrate.
• So a very small drain current that is, reverse leakage current flows. If the P-type substrate is now connected to the source terminal, there is zero voltage across the source substrate junction, and the–drain-substrate junction remains reverse biased.
• When the gate is made positive with respect to the source and the substrate, negative (i.e. minority) charge carriers within the substrate are attracted to the positive gate and accumulate close to the-surface of the substrate. As the gate voltage is increased, more and more electrons accumulate under the gate.
• Since these electrons can not flow across the insulated layer of silicon dioxide to the gate, so they accumulate at the surface of the substrate just below the gate.
• These accumulated minority charge carriers N -type channel stretching from drain to source. When this occurs, a channel is induced by forming what is termed an inversion layer (N-type). Now a drain current start flowing.
• The strength of the drain current depends upon the channel resistance which, in turn, depends upon the number of charge carriers attracted to the positive gate. Thus drain current is controlled by the gate potential.
• Since the conductivity of the channel is enhanced by the positive bias on the gate so this device is also called the enhancement MOSFET or E- MOSFET.

E-MOSFET FEEDBACK BIASING ARRANGEMENT:

• For a MOSFET a direct connection between drain and gate exists such that

$V_G=V_D;V_{GS}=V_{DS}$

• Applying KVL at output side we have

$V_{DS}=V_{DD}-I_DR_D$

• On substituting above equation the drain Source Voltage becomes

$V_{GS}=V_{DD}-I_DR_D$

• Substituitng$I_D=0$ we have

$V_{GS}=V_{DD}\ \vert_{I_D=0}$

• Substituting$V_{GS}=0$ gives

$I_D=\dfrac{V_{DD}}{R_D\vert V_{GS=0}}$

VOLTAGE DIVIDER BIAS CONFIGURATION:

• We know that

$V_{G}=\dfrac{R_2V_{DD}}{R_1+R_2}$

• Applying KVL around the Gate Source Junction we have

$V_G-V_{GS}-V{{R}_S}=0$

• Fromabove equation Gate Source voltage can be obtained as

$V_{GS}=V_G-I_DR_S$

• From Output Section we have

$V_{DS}=V_{DD}-V_{{R}_S}-V_{{R}_D}$

• Hence we have

$V_{DS}=V_{DD}-I_D(R_S+R_D)$