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Compare direct band gap and indirect band gap semiconductors.
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written 8.4 years ago by
teamques10
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| Sr. No | Direct Band gap semiconductor | Indirect band gap semiconductor |
|---|---|---|
| 1 | A direct band-gap (DBG) semiconductor is one in which the maximum energy level of the valence band aligns with the minimum energy level of the conduction band with respect to momentum. | A indirect band-gap (DBG) semiconductor is one in which the maximum energy level of the valence band are misaligned with the minimum energy level of the conduction band with respect to momentum. |
| 2 | In a DBG semiconductor, a direct recombination takes place with the release of the energy equal to the energy difference between the recombining particles. | Due to a relative difference in the momentum, first, the momentum is conserved by release of energy and only after both the momenta align themselves, a recombination occurs accompanied with the release of energy. |
| 3 | The efficiency factor of a DBG semiconductor is much more than that of an IBG semiconductor. | The probability of a radiative recombination, is much less in comparison to that in case of DBG semiconductors |
| 4 | The most thoroughly investigated and studied DBG semiconductor material is Gallium Arsenide (GaAs). | The two well-known intrinsic semiconductors, Silicon and Germanium are both IBG semiconductors. |
| 5 | DBG semiconductors are always preferred over IBG for making optical sources. | The IBG semiconductors cannot be used to manufacture optical sources. |
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