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The resistivity of intrinsic InSb at room temperature is 2 x 10-4? cm. if the mobility of electron is 6m2/V-Sec and mobility of hole is 0-2 m2/V-Sec. calculate its instrinsic carrier density.
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Given –

ρ=2×104Ωcm

μe=6m2/Vsec

μh=0.2m2/Vsec

To find – ni

Solution –

For intrinsic semiconductor,

ne=ninh

we know that,

σ=1ρ

σin=12×104

σin=50ohm/cm

We know that, for intrinsic semiconductor,

σin=ni e(μe+μh)

ni=σine(μe+μn)

=501.6×1019[6+0.2]

  =501.6×1019[6.2]

ni=5.04×1019

∴ …

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