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Symmetrical IGBT | Asymmetrical IGBT |
---|---|
It is also called as nonpunch through IGBT | It is also called as punch through IGBT |
The $n^+$ buffer layer is absent in the structure | The $n^+$ buffer layer is present in the structure |
The IGBT have slower turn off | The IGBT have faster turn off |
The IGBT can block the forward and reverse anode to cathode voltage successfully. They have symmetrical blocking capability | These IGBT can block only the forward anode to cathode voltage successfully. They have an asymmetrical blocking capacity |