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Compare Power BJT, Power MOSFET and IGBT
1 Answer
written 5.4 years ago by |
Sr no | Device Characteristic | Power BJT | Power MOSFET | IGBT |
---|---|---|---|---|
1 | Voltage Rating | High $\lt1$ kv | High $\lt1$ kv | Very High $\gt 1$ kv |
2 | On state losses | Less | More than power BJT | Least |
3 | Device control | Current controlled | Voltage controlled | Voltage controlled |
4 | Input impedance | Low | High | High |
5 | Second break down | occurs | No Second break down | No Second break down |
6 | Switching speed | Slow ($\mu s$) | Fast ($\mu s$) | Medium |
7 | Cost | Low | High | High |
8 | Current Rating | High & $\lt 500A$ | Low & $\lt 200A$ | High & $\gt 500A$ |