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Compare CE,CC and CB configuration of BJT
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written 8.4 years ago by | modified 2.3 years ago by |
Characteristic | Common base (CB) | Common emitter,(CE) | Common collector,(CC) |
---|---|---|---|
Input Dynamic Resistance | Very Low(less than 100 ohm) | Low(less than 1K) | Very High(750K) |
Output Dynamic Resistance | Very High | High | Low |
Current Gain | Less than 1 | High | Very High |
Voltage gain | Greater than CC but less than CE | Highest | Lowest(less than 1) |
Power gain | Medium | Highest | Medium |
Leakage current | Very small | Very large | Very large |
Relationship between I/p and o/p | In phase | Out of phase(180ยบ) | In phase |
Application | For High freq. applications | For Audio freq. Applications | For impedance Matching Applications |