Mosfet Imp Constants and Equations:

1. 1 A = $10^{-8}$ cm

1 nm = 10 A

1 $\mu$ = $10^{-4}$ cm

1 nm = $10^{-7}$ cm

2. 1 eV = $1.6*10^{-19}$ J

3. Permittivity of free space = $E_o$ = $8.85*10^{-14}$ F/cm

4. Relative permittivity of Si= $E_r$ = 11.8

5. Relative permittivity of SiO2 = $E_r$ = 3.97

6. $\frac{KT}{q}$ = 0.0259 V

7. $E_{OX} = 3.97*8.85*10^{-14} = E_rE_o F/cm$

8. $E_{Si} = 11.8*8.85*10^{-14} = E_{Si}E_o $

9. $n_i = 1.45*10^{10} cm^{-3}$

10. $C_{OX} = \frac{E_{OX}}{T_{OX}} = \frac{F/cm}{cm} = F$

11. Threshold = $V_T = \phi_{GC} - (2\phi_F) - (\frac{\phi_{BO}}{C_{OX}}) - (\frac{\phi_{BX}}{C_{OX}})$

• nmos current equation

  Id(lin) = $\frac{UnC_{ox}W}{2L}[2(V_{GS} - V_T)V_{DS} - V_{DS}^2]$

for $V_{GS} \gt V_T ; V_{DS} \lt V_{GS} - V_T$

Id(sat) = $\frac{UnC_{ox}W}{2L}[V_{GS} - V_T]^2$

for $V_{GS} \gt V_T ; V_{DS} \gt V_{GS} - V_T$

Pmos current Equations

Id(lin) = $\frac{UnC_{ox}W}{2L}[2(V_{GS} - V_T)V_{DS} - V_{DS}^2]$

for $V_{GS} \lt V_T ; V_{DS} \gt V_{GS} - V_T$

Id(sat) = $\frac{UnC_{ox}W}{2L}[V_{GS} - V_T]^2$

for $V_{GS} \lt V_T ; V_{DS} \lt V_{GS} - V_T$