written 5.9 years ago by | • modified 5.7 years ago |
Subject :- VLSI Design
Topic :- MOSFET Inverters
Difficulty - Medium
written 5.9 years ago by | • modified 5.7 years ago |
Subject :- VLSI Design
Topic :- MOSFET Inverters
Difficulty - Medium
written 5.7 years ago by |
One terminal of the load device is connected to the drain of the n-channel MOSFET, while the other terminal is connected to VDD, the power supply voltage.
Applying Kirchhoff s Current Law (KCL) to this simple circuit, we see that the load current is always equal to the nMOS drain current.
The voltage transfer characteristic describing Vout as a function of Vin under DC conditions can then be found by analytically solving above equation for various input voltage values. The typical VTC of a realistic nMOS inverter is shown in Figure below.
The general shape of the VTC is qualitatively similar to that of the ideal inverter transfer characteristic.
Two critical voltage points are identified on this curve, where the slope of the Vout(Vin) characteristic or gain of the curve becomes equal to -1, i.e.,
These points are VIL (input low voltage) and VIH (input high voltage). Both of these voltages play significant roles in determining the noise margins of the inverter circuit.