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Describe with the help of neat diagram Haynes - Shockley experiment for measurement of drift mobility of n-type semiconductor.
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written 6.5 years ago by |
The experiment measures the drift mobility of electrons and holes in semiconductors is conceptually simple.
The Haynes-Shockley experiment describes the motion of minority carriers in a semiconductor. By measuring the time it takes for a LED to ionize a Silicon bar applied with a known drift voltage, we can calculate …