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State the properties of thermally grown SiO2.
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  • Melting point – 17000C
  • Dielectric strength – 107 V/cm
  • Relative dielectric constant – 3.9
  • Thermal expansion coefficient 5.6x107/K
  • Molecules / cm32.3x1022cm3
  • Energy gap = 8 eV
  • DC Resistivity 1017 ohm-cm

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