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Compare CVD and PVD processes.
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written 6.1 years ago by
teamques10
★ 68k
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| CVD | PVD |
|---|---|
| During CVD process chemical reaction takes place between the reactive gases & substrate surface. | During PVD process desired film material is released from the source & deposited on to the substrate. |
| It is used to deposit $SiO_2$, Silicon nitride and Silicon. | It is used to deposit metal alloy layers. |
| It uses mixed source material. | It uses pure source material. |
| The material that is introduced on to the substrate is introduced in a gaseous form. | The material that is introduced on to the substrate is introduced in solid form. |
| The gaseous molecules react with the substrate. | The atoms move & get deposited on the substrate |
| CVD uses high temperature ranges $(450-1000^0 C)$ | PVD coating is deposited at relatively low temperature range. $(250-450^0 C)$ |
| CVD is mainly used for depositing compound protective coating. | PVD is suitable for coating tools that are used in applications that demand a tough cutting edge. |
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