• PN junction diode parameters like reverse saturation current, bias current, reverse breakdown voltage and barrier voltage are dependent on temperature.

• Mathematically diode current is given by

I=IS∗(exp((V/(n∗k∗T/q)))–1)I=IS∗(exp((V/(n∗k∗T/q)))–1)

• Hence from equation we conclude that the current should decrease with increase in temperature but exactly opposite occurs there are two reasons

• Rise in temperature generates more electron-hole pair thus conductivity increases and thus increase in current

• Increase in reverse saturation current with temperature offsets the effect of rise in temperature

• Reverse saturation current (IS)(IS) of diode increases with increase in the temperature the rise is 7%/ºC for both germanium and silicon and approximately doubles for every 10ºC10ºC rise in temperature.

• Thus if we kept the voltage constant, as we increase temperature the current increases.

• Barrier voltage is also dependent on temperature it decreases by 2mV/ºC for germanium and silicon.

• Reverse breakdown voltage (VR)(VR) also increases as we increase the temperature.