Ask
Login
0
11kviews
Fabrication of PMOS transistors
written 6.7 years ago by gravatar for vedantchikhale vedantchikhale • 900 modified 5.7 years ago by gravatar for ankitpandey ankitpandey • 100
microelectronics
ADD COMMENT EDIT
1 Answer
0
257views
written 6.6 years ago by gravatar for vedantchikhale vedantchikhale • 900 •   modified 5.7 years ago

Fabrication of NMOS transistor:-

Diffusion Mask -

The first modification of the device wafers was the application of an oxide layer to serve as a diffusion mask. The target thickness of this mask was 8000 Angstroms and the goal was to make it as uniform and contain as little impurities …

Create a free account to keep reading this post.

and 2 others joined a min ago.

ADD COMMENT EDIT
Please log in to add an answer.