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Compare resistive load inverter saturated load inverter and CMOS inverter on the basis of Noise margins, power dissipation, area and delay

Subject :- VLSI Design

Topic :- MOSFET Inverters

Difficulty :- High

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Vout>VinVtn ⇒ driver transistor in saturation – When Vin is small
• Load transistor permanently in saturation Load transistor permanently in saturation Vdsp=VgspVdsp<Vgsp,Vtpor0<Vtp ⇒ Saturated region
• When Vin is Small

Ids,driver=βdriver2(VinVtn)2

Load in Saturation:
Ids,load=βload2(VoutVDDVtp)2

Equating the currents:
Vout=VDD+Vtp+k(VinVtn)
where, k=βdrivenβload

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