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Compare IGBT and Power BJT.

written 6.9 years ago by sndeshpande.pvpp • 150

modified 2.2 years ago by yashbeer ★ 11k

power electronics

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written 2.7 years ago by Krishna_Agrawal • 2.7k

IGBT	BJT
IGBT is a voltage controlled device.	BJT is a current controlled device.
The input impedance of IGBT is high.	The input impedance of BJT is low.
The drive circuit of IGBT is simple.	The drive circuit of IGBT is complex.
Switching speed of IGBT is more than BJT.	Switching speed of BJT is in the range of microseconds means slow switching speed.
IGBT shows negative temperature coefficient up to 70% after that is shows positive temperature coefficient.	BJT is the negative temperature coefficient device.
Conduction losses are low.	Conduction losses are low.
Switching losses are low for high frequency.	Switching losses are high for high frequency.
IGBT is a bipolar device.	BJT is a bipolar device.

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