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Compare BJT, JFET and MOSFET

written 6.9 years ago by teamques10 ★ 68k

modified 2.8 years ago by pedsangini276 • 4.8k

Mumbai University > Electronics Engineering > Sem 4 > Discrete Electronic Circuits

Marks: 5M

discrete electronics

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written 6.9 years ago by teamques10 ★ 68k

•   modified 6.9 years ago

Parameters	Bipolar Junction Transistor (BJT)	Junction Field Effect Transistor (JFET)	Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Symbol
Definition	BJT is known as Biploar Junction Device because it uses both electrons and holes for conduction.	JFET is known as unipolar device because current is due to one charge carriers i.e. electrons or holes.	MOSFET is known as unipolar device because current is due to one charge carriers depending on type of MOS.
Input Resistance	BJT offers low input resistance.	JFET offers large input resistance order of $1M\Omega$ to $5M\Omega$.	MOSFET offers very large input resistance.
Biasing used	Fixed bias, Collector base bias, Voltage divider biasing.	Self bias& Voltage divider biasing.	In DMOSFET we use self bias and voltage divider biasing, in EMOSFET we use feedback bias and voltage divider biasing.
Operating Region	Active, Saturation & Cut off region.	Ohmic & Pinch off region	Linear & Saturation region
Thermal Runaway	Thermal runaway occurs at high temperature.	No thermal runaway.	No thermal runaway.
Type of device	Current controlled device.	Voltage controlled device.	Voltage controlled device
Terminals	Base, Emitter & Collector.	Gate, Drain & Source.	Gate, Drain, Source .
Input current	Input current is order of mA (milli ampere).	Gate current is order of nA (nano ampere).	Gate current is order of pA (pico ampere).
Applications	Low Current application.	Low voltage application.	Since power consumption is less used in CMOS circuits

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