written 7.7 years ago by | modified 2.8 years ago by |
Mumbai University > Electronics Engineering > Sem 4 > Discrete Electronic Circuits
Marks: 5M
Year: Dec 2016
written 7.7 years ago by | modified 2.8 years ago by |
Mumbai University > Electronics Engineering > Sem 4 > Discrete Electronic Circuits
Marks: 5M
Year: Dec 2016
written 7.7 years ago by | • modified 7.7 years ago |
Step 1: Circuit Diagram
Step 2: Finding -VGG
We know that,
$IDSQ=IDSS( 1 - \frac{VGSq}{V_p})^2$
$3mA = 10 mA (1+\frac{VGSq}{6})^2$
$VGSq = -2.71V$
For Fixed bias, $VGG = VGSq = -2.71V$
Step 3: Finding $R_D$
Apply KVL from VDD to Ground through drain to source,
$VDD - IDS \times R_D - VDSq = 0$
Assume mid-point biasing, $VDSq = \frac{1}{2}VDD$
$VDD - \frac{1}{2} VDD = IDS \times R_D$
Assume $VDD = 20V$
$10 = 3mA \times R_D$
$R_D = 3.33K\Omega$
Step 4: Finding $R_G$
As JFET Gate and Source is reverse bias it offers very high input impedance in MΩ.
Hence,
$R_G = 1M\Omega$
Step 5: Designed circuit diagram