Mumbai University > Electronics ana telecommunication engineering > Sem 3 > Analog electronics 1

Marks: 10M

Years: Dec 14

1.Substrate doping $N_a =10^ -16 cm -3$

2.Polysilicon Gae doping $N_d =10^20 cm-3$

3.Gate oxide thickness tox = 0.5 μm

4.Oxide positive charge interface density = $4x10 -10cm-2$

5.Charge of electron$1.6x10^-19 col$

6.Permittivity of free space ϵ̥= $8.85 x 10^-14 F/cm.$

7.Dielectric constant of $S_i$ =11.9

8.Dielectric constant …